Title :
Fabrication of GaSb-based DFB lasers for gas sensing
Author :
Barrios, P.J. ; Gupta, J.A. ; Lapointe, J. ; Aers, G.C. ; Storey, C.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, ON, Canada
Abstract :
Regrowth-free gain-coupled GaSb-based DFB lasers suitable for gas sensing were fabricated. Threshold currents for 2.4 mum emission of 400 mum-long DFB devices were 45 mA with a total output power of nearly 11 mW in CW operation at 20degC.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium compounds; gas sensors; semiconductor lasers; GaSb; current 45 mA; distributed feedback lasers; gas sensing; semiconductor lasers; temperature 20 degC; wavelength 2.4 mum; Distributed feedback devices; Gas lasers; Gratings; Laser feedback; Optical device fabrication; Optical feedback; Optical scattering; Optical sensors; Optical surface waves; Optical waveguides; (140.3490) Lasers, distributed-feedback; (250.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
