DocumentCode
500420
Title
Redirection of lateral emission using nanorod reflectors for power enhancement of GaN light emitting diodes
Author
Cheng, Yun-Wei ; Pan, Kun-Mao ; Chen, Liang-Yi ; Chen, Cheng-Pin ; Ke, Min-Yung ; Huang, JianJang
Author_Institution
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We fabricate the nanorod arrays at the periphery of light-emitting mesa as the reflector. The nanorod arrays redirect the laterally propagated light. The output power is enhanced by 32.1% at 30 mA injection current.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; nanostructured materials; wide band gap semiconductors; GaN; lateral emission; laterally propagated light; light emitting diodes; nanorod arrays; nanorod reflectors; power enhancement; Coatings; Filling; Gallium nitride; Light emitting diodes; Light scattering; Nanoscale devices; Optical arrays; Optical films; Optical scattering; Power generation; (220.4241) Nanostructure fabrication; (230.3670) Light-emitting diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225813
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