Polarized light-emitting diode with its InGaN/GaN quantum well coupled with surface plasmons on a metal grating

Author

Chen, Cheng-Yen ; Shen, Kun-Ching ; Wang, Jyh-Yang ; Chen, Hung-Lu ; Huang, Chi-Feng ; Kiang, Yean-Woei ; Yang, C.C.

Author_Institution

Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

The enhanced and partially polarized output of a green light-emitting diode, in which its InGaN/GaN quantum well couples with surface plasmons on an Ag grating structure, is demonstrated by comparing with the conventionally fabricated devices.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; silver; surface plasmons; wide band gap semiconductors; Ag; InGaN-GaN; green light emitting diode; metal grating; polarized light emitting diode; semiconductor quantum wells; silver grating structure; surface plasmons; Coatings; Gallium nitride; Gratings; Light emitting diodes; Optical coupling; Optical devices; Optical polarization; Optical surface waves; Photonics; Plasmons; 230.3670 Light-emitting diodes; 240.6680 Surface plasmons;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225837