DocumentCode
500536
Title
Fabrication of highly stacked quantum dot laser
Author
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya
Author_Institution
Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.
Keywords
III-V semiconductors; indium compounds; optical fabrication; quantum dot lasers; InAs; broad-area laser diodes fabrication; current 517.5 mA; laser emission; quantum dot laser fabrication; strain-compensation technique; wavelength 1529 nm; Atomic force microscopy; Capacitive sensors; Indium phosphide; Laser modes; Lattices; Optical device fabrication; Quantum dot lasers; Semiconductor lasers; Substrates; Temperature; (140.5960) Semiconductor lasers; (250.5590) Quantum-well, -wire and -dot devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225947
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