Electro-optical properties of n-InGaN/p-GaN LED with p-side down with varying indium composition

Author

Reed, Meredith L. ; Shen, Haiying ; Wraback, M. ; Syrkin, A. ; Usikov, A.

Author_Institution

Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

The negative polarization charge at the n-InGaN/p-GaN interface of single heterojunction LEDs with p-side down are investigated for various In-compositions. We demonstrate peak emission wavelength blue-shift and intensity dependence on In-composition with increasing current density.

Keywords

III-V semiconductors; current density; electro-optical devices; electro-optical effects; gallium compounds; indium compounds; light emitting diodes; spectral line shift; InGaN-GaN; current density; electro-optical properties; indium composition; intensity dependence; n-InGaN-p-GaN interface; negative polarization charge; peak emission wavelength blue-shift; single heterojunction LED; Charge carrier processes; Current density; Electron emission; Filling; Indium; Light emitting diodes; Optical films; Optical polarization; Spontaneous emission; Tunneling; (230.2090) Electro-optical devices; (230.3670) Light Emitting Diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225952