DocumentCode
500547
Title
Ultra-thin-walled III-arsenide microtubes with embedded QW light emitters: Room temperature PL characteristics
Author
Chun, Ik Su ; Bassett, Kevin ; Challa, Archana ; Li, Xiuling
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
Arsenide-based III-V microtubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence characteristics of such microtubes with embedded GaAs quantum-well structure that is only 38 nm in total wall thickness.
Keywords
III-V semiconductors; photoluminescence; semiconductor quantum wells; GaAs; quantum-well structure; report room-temperature photoluminescence; ultra-thin-walled III-arsenide microtubes; Gallium arsenide; III-V semiconductor materials; Light emitting diodes; MOCVD; Optical ring resonators; Photoluminescence; Quantum dots; Semiconductor nanostructures; Stimulated emission; Temperature; (250.5230) Photoluminescence; (310.6628) Subwavelength structures, nanostructures;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225959
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