Title :
High-power GaN-based blue-violet laser diodes
Author :
Kameyama, S. ; Kunoh, Y. ; Inoshita, K. ; Inoue, D. ; Murayama, Y. ; Bessho, Y. ; Goto, T. ; Kunisato, T. ; Nomura, Y.
Author_Institution :
Adv. Devices Res. Center, SANYO Electr. Co., Ltd., Hirakata, Japan
Abstract :
We have succsessfully developed blue-violet laser diodes having the world´s highest output power of 450 mW by introducing a novel facet coating structure, reducing the internal loss in devices, and making a cavity length long.
Keywords :
III-V semiconductors; gallium compounds; laser beams; laser cavity resonators; optical films; optical losses; semiconductor lasers; wide band gap semiconductors; GaN; blue-violet laser diode; facet coating structure; high-power laser diode; internal loss reduction; laser cavity length; power 450 mW; Coatings; Diode lasers; Disk recording; High speed optical techniques; Optical devices; Optical losses; Optical pulses; Optical recording; Power generation; Space vector pulse width modulation; (140.5960) Semiconductor lasers; (230.0230) Optical devices;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
