Pulsed metalorganic chemical vapor deposition of In-Polar and N-Polar InN semiconductors on GaN / sapphire for terahertz applications

Author

Zhao, Hongping ; Jamil, M. ; Liu, Guangyu ; Huang, G.S. ; Tong, Hua ; Xu, Guibao ; Ding, Yujie ; Tansu, Nelson

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

Narrow bandgap (0.77 eV) In- and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0 THz) with output power of 2.36 muW.

Keywords

III-V semiconductors; MOCVD; indium compounds; laser beam effects; narrow band gap semiconductors; InN; pulsed metalorganic chemical vapor deposition; terahertz radiation; ultrafast laser excitation; Chemical vapor deposition; Gallium nitride; MOCVD; Optical films; Optical pulses; Photonic band gap; Pulsed laser deposition; Semiconductor films; Temperature; Ultrafast optics; (160.4670) Optical Materials; (310.3840) Material and Process Characterization; (310.6860) Thin Film, Optical Properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5226003