Progress in the growth, characterization and device performance for nonpolar and semipolar GaN-based materials

This work provides motivation and background for work on nonpolar and semipolar GaN-based materials and then highlight UCSB work on growth of nonpolar and semipolar GaN on foreign substrates and on freestanding GaN substrates. UCSB work on nonpolar and semipolar GaN lighting emitting devices, including record 405 nm LED performance, the first nonpolar and semipolar GaN-based laser diodes, the first AlGaN clad-free GaN-based laser diodes, and progress in blue, green, and yellow emitters and report on the first demonstration of a normally-off nonpolar GaN-based transistors are summarized.