Impact of anti-Zeno effect on a coupled nanocavity-quantum-dot system

Author

Yamaguchi, M. ; Asano, T. ; Kojima, K. ; Noda, S.

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

A comprehensive theory of couplings between a cavity and different charge configurations in a quantum dot is developed. It is shown that the quantum anti-Zeno effect is essential for the results obtained by QED experiments. The quantum dynamics of the system employing the quantum master equation is analysed. A Stansky-Krastanov InAs QD grown on a GaAs substrate was assumed, and the only first confined levels of the electrons and heavy holes in the QD were considered.

Keywords

III-V semiconductors; indium compounds; nanophotonics; photonic crystals; quantum electrodynamics; quantum optics; semiconductor quantum dots; GaAs; InAs-GaAs; QED experiments; coupled nanocavity-quantum-dot system; quantum antiZeno effect; quantum dot charge configuration; quantum electrodynamics; two-dimensional photonic crystal slab nanocavity; Charge carrier processes; Electrodynamics; Elementary particle vacuum; Excitons; Nanophotonics; Photonic crystals; Polarization; Quantum dots; Quantum mechanics; Solid state circuits; (270.5580) Quantum electrodynamics; (350.4238) Nanophotonics and photonic crystals;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5226126