DocumentCode
501439
Title
TEM analysis on the structure of bonding pad interface for bondability issue
Author
Duan, Shuqing ; Li, Ming ; Chien, W. T Kary
Author_Institution
Semicond. Manuf. Int. (Shanghai) Corp., Shanghai, China
fYear
2009
fDate
6-10 July 2009
Firstpage
135
Lastpage
137
Abstract
Transmission Electron Microscopy (TEM), as a main analysis technique, together with Scanning Electron Spectroscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDX) were employed to analyze the morphology and microstructure of Au-Al interface of Gold ball bonding. A special sample preparation method for TEM analysis was devised to overcome peeling issue of Gold bonding ball from the Al pad. There were two kinds of phases identified below the interface crack based on the elemental analysis and the contrast of TEM pictures. Al had been completely consumed to react with Au after 325degC temperature aging for 1000 hours. Near Al-Au interface, Au4Al phase with cubic lattice was indexed by the selective area diffraction pattern. The final IMC phase formed by Au-Al interfacial reaction in the middle of the ball bond was observed to be different compared to the peripheral region.
Keywords
X-ray chemical analysis; X-ray spectroscopy; aluminium alloys; cracks; gold alloys; interface structure; lead bonding; scanning electron microscopy; transmission electron microscopy; Au-Al; ball bonding; bonding pad interface; energy dispersive X-ray spectroscopy; interface crack; scanning electron spectroscopy; selective area diffraction; transmission electron microscopy; Aging; Bonding; Dispersion; Gold; Microstructure; Morphology; Scanning electron microscopy; Spectroscopy; Temperature; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232684
Filename
5232684
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