An analytical expression for the I – V characteristics of AlGaN/GaN HEMTs

In this paper an analytical expression for the current-voltage (I-V) characteristics of AlGaN/GaN HEMTs is presented. Two functions are suggested to model the dependence of the voltage parameter on drain voltage. The resultant I-V relationship incorporates the 2DEG sheet carrier concentration and mobility product. It also includes the effect of source and drain resistances. The obtained analytical relationship helps speeding up the I-V calculations meanwhile, keeping it simple and accurate. Due to its simplicity, it is ideally suited for circuit simulation purposes. The validity of the I-V results was tested and satisfactory results were obtained over a wide range of bias voltages.