Simulation and characterization of III–V quaternary semiconductor vertical cavity surface emitting laser (VCSEL)

This paper devoted to simulate and characterize of III-V quaternary semiconductor vertical cavity surface emitting laser (VCSEL). The simulated device is Ga_xIn_1-xAs_yP_1-y VCSEL in the active region and Al_xGa_1-xIn_yAs_1-y/InP material system for the distributed Bragg reflectors (DBR) to achieve a high reflectivity. The simulation process is based on solution of two coupled non-linear differential equations, one for carrier distribution N and one for photon density S of the generated laser beam and several analytical expressions describes VCSEL behavior. VCSEL performance has been carried out for such VCSEL structure fabricated for operation at 1.55 mum wavelength. The evaluated parameters are light-current characteristics, threshold current, carrier density, optical intensity, and total transient output power for the generated laser beam. A variety of such parameters shows results consistent with theory and experiment.