DocumentCode
501496
Title
Design of a 3.1–10.6-GHz low-power CMOS low-noise amplifier for ultra-wideband receivers using standard 0.13 µm CMOS technology
Author
Ishaac, Nader Albert
Author_Institution
HUAWEI Technol. Co., Cairo, Egypt
fYear
2009
fDate
17-19 March 2009
Firstpage
1
Lastpage
8
Abstract
In this paper, we present an ultra-wideband 3.1-10.6 GHz low-noise amplifier employing an input three-section elliptic filter to achieve broadband input matching. The flat gain of the LNA is achieved by the inductor peaking load. The LNA is designed in the standard 0.13 mum CMOS technology. It achieved forward gain (S21) around 10 dB, input return loss (S11) of -9.8 dB, noise figure (NF) of 3.5 dB, input third-order-intercept point (IIP3) of 0.6 dBm, 1-dB compression point (P1dB) of -7.9 dBm, good phase linearity property (group-delay-variation is only plusmn9.4 ps), operates from 1.2 V power supply and consuming 5.4 mW.
Keywords
CMOS integrated circuits; MMIC amplifiers; elliptic filters; field effect MMIC; integrated circuit design; integrated circuit noise; low noise amplifiers; low-power electronics; microwave filters; radio receivers; wideband amplifiers; CMOS technology; broadband input matching; compression point; forward gain; frequency 3.1 GHz to 10.6 GHz; gain 10 dB; gain 9.8 dB; group-delay-variation; input return loss; input third-order-intercept point; low-power CMOS low-noise amplifier design; noise figure; noise figure 3.5 dB; phase linearity property; power 5.4 mW; size 0.13 mum; three-section elliptic filter; ultra-wideband receivers; voltage 1.2 V; CMOS technology; Impedance matching; Inductors; Linearity; Low-noise amplifiers; Matched filters; Noise figure; Noise measurement; Power supplies; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Conference, 2009. NRSC 2009. National
Conference_Location
New Cairo
ISSN
1110-6980
Print_ISBN
978-1-4244-4214-0
Type
conf
Filename
5233952
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