10 W Class AB power amplifier design for UMTS applications using GaN HEMT

Author

Sajjad, Ahmed ; Sayed, Ahmed ; Al Tanany, Ahmed ; Boeck, Georg

Author_Institution

Microwave Eng., Berlin Univ. of Technol., Berlin, Germany

fYear

2009

fDate

17-19 March 2009

Firstpage

1

Lastpage

8

Abstract

This paper exhibits a 10 W class AB highly linear power amplifier (PA) for a frequency of 2.14 GHz using GaN HEMT. Power and linearity measurements and simulations illustrate stupendous correspondence. An output power of 11 W (41 dBm) with maximum drain efficiency (eta) of 72 % (PAE 56 %) is achieved. Linearity measurements were made with a frequency spacing of 100 KHz and output third-order and second-order intercept points (OIP3 and OIP2) were observed to be 48 dBm and 80 dBm respectively.

Keywords

3G mobile communication; UHF amplifiers; UHF transistors; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GaN; HEMT; UMTS applications; class AB power amplifier design; efficiency 72 percent; frequency 2.14 GHz; linear power amplifier; maximum drain efficiency; output third-order intercept point; power 10 W; power 11 W; second-order intercept point; simulation; 3G mobile communication; Frequency; Gallium nitride; HEMTs; High power amplifiers; Linearity; Power amplifiers; Power generation; Power measurement; Time of arrival estimation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 2009. NRSC 2009. National

Conference_Location

New Cairo

ISSN

1110-6980

Print_ISBN

978-1-4244-4214-0

Type

conf

Filename

5233954