Title :
An ESD protected high linearity PA driver for 2.5 GHz mobile WIMAX applications
Author :
Abdel Gawad, Ghada H I ; Hafez, Amr
Author_Institution :
Electron. Res. Inst., Cairo, Egypt
Abstract :
In this paper, a power amplifier driver is presented, PA driver circuit post layout simulation results shows up to 10 dBm output power and an IP3 of more than 22.5 dBm implemented on a 0.35 mum SiGe BiCMOS technology. The PA driver is suited for WIMAX applications operating in 2.3 to 2.7 GHz band.
Keywords :
BiCMOS analogue integrated circuits; WiMax; electrostatic discharge; mobile communication; power amplifiers; BiCMOS technology; ESD protected high linearity PA driver; frequency 2.3 GHz to 2.7 GHz; mobile WIMAX applications; power amplifier driver; size 0.35 mum; Circuit simulation; Driver circuits; Electrostatic discharge; Germanium silicon alloys; Linearity; Power amplifiers; Power generation; Protection; Silicon germanium; WiMAX;
Conference_Titel :
Radio Science Conference, 2009. NRSC 2009. National
Conference_Location :
New Cairo
Print_ISBN :
978-1-4244-4214-0
