Title :
Numerical simulation of SiC GTO thyristor using finite element analysis
Author :
Mohamed, Norainon ; Sujod, Muhamad Zahim
Author_Institution :
Fac. of Electr. & Electron. Eng., Univ. Malaysia Pahang, Kuantan, Malaysia
Abstract :
A change of technology from Si to SiC will revolutionize the power electronics. In this paper, the switching simulation, 4H-SiC GTO thyristor is presented and tested numerically by predicting its performance using the 2-D simulator developed in this project. We calculate turn-off time and loss of SiC GTO thyristor using 2-dimensional device simulation.
Keywords :
finite element analysis; silicon compounds; thyristors; 2D device simulation; SiC; finite element analysis; gate turn-off thyristors; Finite element methods; Numerical simulation; Poisson equations; Power electronics; Predictive models; Radiative recombination; Semiconductor materials; Silicon carbide; Spontaneous emission; Thyristors; GTO thyristor; Silicon Carbide; device simulation;
Conference_Titel :
Electrical Engineering and Informatics, 2009. ICEEI '09. International Conference on
Conference_Location :
Selangor
Print_ISBN :
978-1-4244-4913-2
DOI :
10.1109/ICEEI.2009.5254786
