Title :
Influence of process and device design on ESD sensitivity of a Silicon Germanium heterojunction bipolar transistor
Author :
Voldman, Steven H. ; Lanzerotti, Louis D. ; Johnson, Robb A.
Author_Institution :
Commun. R&D Center (CRDC), IBM, Essex Junction, VT, USA
Abstract :
Emitter-base design has a significant influence on both the device performance and ESD sensitivity of silicon germanium heterojunction bipolar transistors. HBM and TLP emitter-base measurements of a ldquoself-alignedrdquo and ldquonon-self alignedrdquo SiGe HBT device is shown for the first time. The evaluation of process variations and device design spacings on ESD robustness is evaluated for both positive and negative stress conditions as a function of the salicide location, emitter-base spacing, and collector opening.
Keywords :
Ge-Si alloys; electrostatic discharge; heterojunction bipolar transistors; stress analysis; ESD sensitivity; HBM emitter-base measurement; SiGe; TLP; emitter-base design; heterojunction bipolar transistor; salicide location; silicon germanium HBT; stress conditions; Cutoff frequency; Electrostatic discharge; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Process design; Radio frequency; Robustness; Silicon germanium; Stress;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
Conference_Location :
Portland, OR
Print_ISBN :
978-1-5853-7039-9
Electronic_ISBN :
978-1-5853-7039-9
