• DocumentCode
    501878
  • Title

    Diode network used as ESD protection in RF applications

  • Author

    Velghe, R.M.D.A. ; de Vreede, P.W.H. ; Woerlee, P.H.

  • fYear
    2001
  • fDate
    11-13 Sept. 2001
  • Firstpage
    335
  • Lastpage
    343
  • Abstract
    RF circuits in CMOS ask for adequate ESD protections without deteriorating the RF performance. Standard ESD protections are hindered by parasitic capacitance, area requirements and quality factor. This paper presents N+/Pwell and P+/Nwell STI-bounded diodes with a satisfactory ESD performance, tunable with diode area, and an excellent RF performance.
  • Keywords
    CMOS integrated circuits; Q-factor; electrostatic discharge; microwave diodes; radiofrequency integrated circuits; CMOS RF circuit; ESD protection; STI-bounded diodes; diode network; parasitic capacitance; quality factor; Area measurement; Current measurement; Diodes; Electrostatic discharge; Leakage current; Protection; Pulse measurements; Radio frequency; Transmission line measurements; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
  • Conference_Location
    Portland, OR
  • Print_ISBN
    978-1-5853-7039-9
  • Electronic_ISBN
    978-1-5853-7039-9
  • Type

    conf

  • Filename
    5254949
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=501878