Title :
Electrostatic Discharge and electrical overstress on GaN/InGaN Light Emitting Diodes
Author :
Meneghesso, G. ; Chini, A. ; Maschietto, A. ; Zanoni, E. ; Malberti, P. ; Ciappa, M.
Author_Institution :
INFM, Univ. of Padova, Padova, Italy
Abstract :
Results of ESD testing (HBM and TLP) carried out on commercially available GaN LEDs grown on sapphire or silicon carbide will be presented. A non optimal design of layout leads to current crowding phenomena determining premature failure. Devices grown on SiC, adopting vertical current flow, and optimized layout and technology, achieved maximum ESD robustness in excess of 8 kV HBM, 5 A TLP.
Keywords :
III-V semiconductors; electrostatic discharge; gallium compounds; indium compounds; light emitting diodes; semiconductor growth; silicon compounds; wide band gap semiconductors; Al2O3; ESD testing; GaN-InGaN; SiC; current 5 A; electrical overstress; electrostatic discharge; light emitting diodes; sapphire; silicon carbide; vertical current flow; Electrostatic discharge; Gallium nitride; Gaussian processes; Laboratories; Light emitting diodes; Proximity effect; Robustness; Scanning electron microscopy; Silicon carbide; Testing;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
Conference_Location :
Portland, OR
Print_ISBN :
978-1-5853-7039-9
Electronic_ISBN :
978-1-5853-7039-9
