Human Body Model test of a Low Voltage Threshold SCR device: Simulation and comparison with the Transmission Line Pulse test

Author

Guilhaume, A. ; Chante, J.P. ; Galy, P. ; Foucher, B. ; Bardy, S. ; Blanc, F.

Author_Institution

EADS CCR, Service DCR/BE, Suresnes, France

fYear

2001

fDate

11-13 Sept. 2001

Firstpage

109

Lastpage

118

Abstract

A methodology for the application of two-dimensional (2-D) device simulation to HBM events is presented, validated on linear components and applied on the particular case of an ESD protection structure (a 1.2 mum Low Voltage Threshold Silicon Controlled Rectifier LVTSCR). Then we compare HBM and TLP tests. For this example, no correlation between the HBM breakdown level and the second breakdown current density J_t2 has been found. Nevertheless, we demonstrate some common mechanisms between the two types of tests.

Keywords

electrostatic discharge; low-power electronics; thyristors; transmission line theory; ESD protection structure; HBM events; human body model test; low voltage threshold SCR device; transmission line pulse test; Biological system modeling; Discrete event simulation; Electric breakdown; Electrostatic discharge; Humans; Low voltage; Testing; Thyristors; Transmission lines; Two dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.

Conference_Location

Portland, OR

Print_ISBN

978-1-5853-7039-9

Electronic_ISBN

978-1-5853-7039-9

Type

conf

Filename

5254980