DocumentCode
501909
Title
Automatic layout based verification of electrostatic discharge paths
Author
Ngan, Paul ; Gramacy, Robert ; Wong, Ching-Kwok ; Oliver, Dan ; Smedes, Theo
Author_Institution
Philips Semicond., Sunnyvale, CA, USA
fYear
2001
fDate
11-13 Sept. 2001
Firstpage
95
Lastpage
100
Abstract
This work describes an ESD path verification methodology based on layout parasitic extraction. This approach was implemented in Cadence DFII. It provides information about the preferred ESD path between two pads and estimates the peak pad to pad voltage. The path can also be overlaid on the layout view. The methodology was applied to a 0.5 um BiCMOS design to improve its ESD robustness. In that case, weak ESD paths overlooked during conventional design reviews were identified and corrected. The ESD robustness improved from 1.0 kV to 2.5 kV and 100 V to 250 V for HBM and MM respectively.
Keywords
BiCMOS integrated circuits; electrostatic discharge; integrated circuit layout; BiCMOS design; Cadence DFII; electrostatic discharge path verification methodology; layout parasitic extraction; size 0.5 mum; BiCMOS integrated circuits; Circuit simulation; Data mining; Electrostatic discharge; Product design; Protection; Robustness; Silicon; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
Conference_Location
Portland, OR
Print_ISBN
978-1-5853-7039-9
Electronic_ISBN
978-1-5853-7039-9
Type
conf
Filename
5254982
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