• DocumentCode
    501909
  • Title

    Automatic layout based verification of electrostatic discharge paths

  • Author

    Ngan, Paul ; Gramacy, Robert ; Wong, Ching-Kwok ; Oliver, Dan ; Smedes, Theo

  • Author_Institution
    Philips Semicond., Sunnyvale, CA, USA
  • fYear
    2001
  • fDate
    11-13 Sept. 2001
  • Firstpage
    95
  • Lastpage
    100
  • Abstract
    This work describes an ESD path verification methodology based on layout parasitic extraction. This approach was implemented in Cadence DFII. It provides information about the preferred ESD path between two pads and estimates the peak pad to pad voltage. The path can also be overlaid on the layout view. The methodology was applied to a 0.5 um BiCMOS design to improve its ESD robustness. In that case, weak ESD paths overlooked during conventional design reviews were identified and corrected. The ESD robustness improved from 1.0 kV to 2.5 kV and 100 V to 250 V for HBM and MM respectively.
  • Keywords
    BiCMOS integrated circuits; electrostatic discharge; integrated circuit layout; BiCMOS design; Cadence DFII; electrostatic discharge path verification methodology; layout parasitic extraction; size 0.5 mum; BiCMOS integrated circuits; Circuit simulation; Data mining; Electrostatic discharge; Product design; Protection; Robustness; Silicon; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
  • Conference_Location
    Portland, OR
  • Print_ISBN
    978-1-5853-7039-9
  • Electronic_ISBN
    978-1-5853-7039-9
  • Type

    conf

  • Filename
    5254982