DocumentCode :
501909
Title :
Automatic layout based verification of electrostatic discharge paths
Author :
Ngan, Paul ; Gramacy, Robert ; Wong, Ching-Kwok ; Oliver, Dan ; Smedes, Theo
Author_Institution :
Philips Semicond., Sunnyvale, CA, USA
fYear :
2001
fDate :
11-13 Sept. 2001
Firstpage :
95
Lastpage :
100
Abstract :
This work describes an ESD path verification methodology based on layout parasitic extraction. This approach was implemented in Cadence DFII. It provides information about the preferred ESD path between two pads and estimates the peak pad to pad voltage. The path can also be overlaid on the layout view. The methodology was applied to a 0.5 um BiCMOS design to improve its ESD robustness. In that case, weak ESD paths overlooked during conventional design reviews were identified and corrected. The ESD robustness improved from 1.0 kV to 2.5 kV and 100 V to 250 V for HBM and MM respectively.
Keywords :
BiCMOS integrated circuits; electrostatic discharge; integrated circuit layout; BiCMOS design; Cadence DFII; electrostatic discharge path verification methodology; layout parasitic extraction; size 0.5 mum; BiCMOS integrated circuits; Circuit simulation; Data mining; Electrostatic discharge; Product design; Protection; Robustness; Silicon; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
Conference_Location :
Portland, OR
Print_ISBN :
978-1-5853-7039-9
Electronic_ISBN :
978-1-5853-7039-9
Type :
conf
Filename :
5254982
Link To Document :
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