• DocumentCode
    501911
  • Title

    Modeling substrate diodes under ultra high ESD injection conditions

  • Author

    Boselli, Gianluca ; Ramaswamy, Sridhar ; Amerasekera, Ajith ; Mouthaan, Ton ; Kuper, Fred

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Twente, Enschede, Netherlands
  • fYear
    2001
  • fDate
    11-13 Sept. 2001
  • Firstpage
    70
  • Lastpage
    80
  • Abstract
    In this paper the behavior of P+-N--N+ substrate diodes under ultra high injection conditions will be analyzed both numerically and experimentally. The J(V) characteristic in this regime will be analytically obtained, modeled and verified both on numerical simulations and on measured devices. For modeling purposes, an analytical fitting law matching the J(V) characteristic over a broad range of injection levels will be proposed. Self-heating effects and process/layout variations will be analyzed too.
  • Keywords
    electrostatic discharge; semiconductor diodes; J-V characteristic; self-heating effect; substrate diode; ultra high ESD injection condition; Bipolar transistors; CMOS technology; Circuits; Conductivity; Electrons; Electrostatic discharge; Instruments; Protection; Semiconductor diodes; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
  • Conference_Location
    Portland, OR
  • Print_ISBN
    978-1-5853-7039-9
  • Electronic_ISBN
    978-1-5853-7039-9
  • Type

    conf

  • Filename
    5254984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=501911