Title :
Analysis and improved compact modeling of the breakdown behavior of sub-0.25 micron ESD protection ggNMOS devices
Author :
Vassilev, Vessen ; Lorenzini, M. ; Groeseneken, Guido ; Steyaert, M. ; Maes, H.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The work focuses on a better understanding of the sub-quater micron ggNMOS device breakdown, compact modeling of the band-to-band tunneling enhanced substrate current and the observed gate hot hole injection current. Simple implications of the improved subbreakdown current model on the ggnNMOS model behaviour are shown. Finally, the observed TLP failure mode of the investigated devices is discussed.
Keywords :
MOSFET; electrostatic discharge; semiconductor device breakdown; semiconductor device models; tunnelling; ESD protection; band-to-band tunneling enhanced substrate current; gate hot hole injection current; micron ggNMOS device breakdown; micron ggNMOS device compact modeling; subbreakdown current model; Decision support systems; Electric breakdown; Electrostatic discharge; Protection;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
Conference_Location :
Portland, OR
Print_ISBN :
978-1-5853-7039-9
Electronic_ISBN :
978-1-5853-7039-9
