• DocumentCode
    50225
  • Title

    Design of GaAs Solar Cells Operating Close to the Shockley–Queisser Limit

  • Author

    Xufeng Wang ; Khan, Mohammad Rezwan ; Gray, Jeffery L. ; Alam, Md. Ashraful ; Lundstrom, Mark S.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    3
  • Issue
    2
  • fYear
    2013
  • fDate
    Apr-13
  • Firstpage
    737
  • Lastpage
    744
  • Abstract
    With recent advances in device design, single-junction GaAs solar cells are approaching their theoretical efficiency limits. Accurate numerical simulation may offer insights that can help close the remaining gap between the practical and theoretical limits. Significant care must be taken, however, to ensure that the simulation is self-consistent and properly comprehends thermodynamic limits. In this paper, we use rigorous photon recycling simulation coupled with carrier transport simulation to identify the dominant loss mechanisms that limit the performance of thin-film GaAs solar cells.
  • Keywords
    III-V semiconductors; electrical resistivity; gallium arsenide; numerical analysis; semiconductor thin films; solar cells; thin film devices; GaAs; Shockley-Queisser Limit; carrier transport simulation; device design; loss mechanisms; numerical simulation; photon recycling simulation; single-junction solar cells; theoretical efficiency limits; thermodynamic limits; thin film solar cells; Absorption; Gallium arsenide; Mirrors; Photovoltaic cells; Radiative recombination; Recycling; Gallium arsenide; photovoltaic cells; solar energy; thin-film devices;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2013.2241594
  • Filename
    6458975