Transient analysis of ESD protection elements by time domain transmission using repetitive pulses

Author

Wolf, H. ; Gieser, H. ; Stadler, W. ; Wilkening, W. ; Rose, P. ; Ning Qu

Author_Institution

IZM-M/ATIS Anal. & Test of Integrated Syst., Fraunhofer-Inst. fur Zuverlassigkeit und Mikrointegration, Munich, Germany

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

304

Lastpage

310

Abstract

This paper describes a test method which allows investigating the transient switching behavior of ESD-Protection elements with very high transient resolution within the first nanoseconds. It is based on time domain transmission (TDT) measurements using a repetitive pulser. By means of this method the turn-on behavior of forward biased diodes was investigated and compared with single shot TLP data and device simulation. Furthermore the dV/dt-triggering of a protection transistor was analyzed.

Keywords

diodes; electrostatic discharge; integrated circuit testing; transient analysis; transistor circuits; ESD protection element; diodes turn-on behavior; forward biased diode; protection transistor; repetitive pulser; single shot TLP data; time domain transmission measurement; transient analysis; transient switching behavior; transmission line pulsing; Bandwidth; Electrostatic discharge; Oscilloscopes; Power system transients; Protection; Pulse measurements; Sampling methods; Time domain analysis; Transient analysis; Transmission line theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.

Conference_Location

Anaheim, CA

Print_ISBN

978-1-5853-7115-0

Type

conf

Filename

5256765