DocumentCode :
502590
Title :
Development of ion balance sensor by using MOSFET
Author :
Sakuyarna, M. ; Takeuchi, M. ; Terashige, T. ; Yoshioka, S. ; Okano, K.
Author_Institution :
Ibaraki Univ., Hitachi, Japan
fYear :
2006
fDate :
10-15 Sept. 2006
Firstpage :
235
Lastpage :
239
Abstract :
A new ion balance sensor was developed in order to control ion generation of an air ionizer. The sensor, in spite of its very slmple structure, can detect the ion balance instantly with enough sensitivity, with a shorter response tune and a higher spatial resolution compared to a charge plate monitor. An air ionizer control system that can generate specific quantity of ions at desired locations can be easily implemented by using feedback of the sensed signal to the air ionizer.
Keywords :
MOSFET; electric variables measurement; semiconductor device measurement; sensors; MOSFET; air ionizer; charge plate monitor; ion balance sensor; ion generation; Control systems; Delay; Inspection; MOSFET circuits; Manufacturing processes; Monitoring; Semiconductor device manufacture; Sensor phenomena and characterization; Spatial resolution; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-5853-7115-0
Type :
conf
Filename :
5256776
Link To Document :
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