• DocumentCode
    502590
  • Title

    Development of ion balance sensor by using MOSFET

  • Author

    Sakuyarna, M. ; Takeuchi, M. ; Terashige, T. ; Yoshioka, S. ; Okano, K.

  • Author_Institution
    Ibaraki Univ., Hitachi, Japan
  • fYear
    2006
  • fDate
    10-15 Sept. 2006
  • Firstpage
    235
  • Lastpage
    239
  • Abstract
    A new ion balance sensor was developed in order to control ion generation of an air ionizer. The sensor, in spite of its very slmple structure, can detect the ion balance instantly with enough sensitivity, with a shorter response tune and a higher spatial resolution compared to a charge plate monitor. An air ionizer control system that can generate specific quantity of ions at desired locations can be easily implemented by using feedback of the sensed signal to the air ionizer.
  • Keywords
    MOSFET; electric variables measurement; semiconductor device measurement; sensors; MOSFET; air ionizer; charge plate monitor; ion balance sensor; ion generation; Control systems; Delay; Inspection; MOSFET circuits; Manufacturing processes; Monitoring; Semiconductor device manufacture; Sensor phenomena and characterization; Spatial resolution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-5853-7115-0
  • Type

    conf

  • Filename
    5256776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=502590