Title :
Tunable bipolar transistor for ESD protection of HV CMOS applications
Author :
Schneider, J. ; Wendel, Martin ; Esmark, K.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
A new ESD device for high voltage CMOS applications is presented exemplary for a 90 nm CMOS technology. The high-current characteristic of this lateral bipolar device can be adjusted in a wide range by implant dose and layout trimming. This enables protection of pads operating at voltages exceeding maximum MOS specification.
Keywords :
CMOS integrated circuits; bipolar transistors; circuit tuning; electrostatic discharge; integrated circuit layout; ESD protection device; HV CMOS application; circuit layout trimming; high-current characteristics; lateral bipolar device; size 90 nm; tunable bipolar transistor; Bipolar transistors; CMOS technology; Clamps; Driver circuits; Electrostatic discharge; Implants; Low voltage; MOSFETs; Protection; Tunable circuits and devices;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-5853-7115-0
