• DocumentCode
    502591
  • Title

    Tunable bipolar transistor for ESD protection of HV CMOS applications

  • Author

    Schneider, J. ; Wendel, Martin ; Esmark, K.

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2006
  • fDate
    10-15 Sept. 2006
  • Firstpage
    214
  • Lastpage
    221
  • Abstract
    A new ESD device for high voltage CMOS applications is presented exemplary for a 90 nm CMOS technology. The high-current characteristic of this lateral bipolar device can be adjusted in a wide range by implant dose and layout trimming. This enables protection of pads operating at voltages exceeding maximum MOS specification.
  • Keywords
    CMOS integrated circuits; bipolar transistors; circuit tuning; electrostatic discharge; integrated circuit layout; ESD protection device; HV CMOS application; circuit layout trimming; high-current characteristics; lateral bipolar device; size 90 nm; tunable bipolar transistor; Bipolar transistors; CMOS technology; Clamps; Driver circuits; Electrostatic discharge; Implants; Low voltage; MOSFETs; Protection; Tunable circuits and devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-5853-7115-0
  • Type

    conf

  • Filename
    5256777
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=502591