• DocumentCode
    502597
  • Title

    Partially Depleted SOI body-contacted MOSFET-triggered silicon controlled rectifier for ESD protection

  • Author

    Entringer, C. ; Flatresse, P. ; Galy, Ph ; Azais, F. ; Nouet, P.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2006
  • fDate
    10-15 Sept. 2006
  • Firstpage
    166
  • Lastpage
    171
  • Abstract
    This paper introduces a new efficient SCR ESD protection structure, with both polysilicon gates and body-contacts, in a partially depleted SOI technology. It is shown that a low triggering voltage is obtained thanks to MOSFET triggering, while a low leakage current in the off state can be achieved by biasing PWELL body and the MOSFET gate.
  • Keywords
    MOSFET; electrostatic discharge; silicon-on-insulator; thyristors; ESD protection; PWELL biasing; body-contacted MOSFET triggering; low-leakage current; partially-depleted SOI technology; polysilicon gates; silicon-controlled rectifier; Anodes; Electrostatic discharge; Leakage current; Low voltage; MOS devices; MOSFET circuits; Protection; Silicon; Thyristors; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-5853-7115-0
  • Type

    conf

  • Filename
    5256783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=502597