• DocumentCode
    502606
  • Title

    Effect of electrostatic discharge on tunneling magnetoresistive sensor

  • Author

    Lai, A. ; Leung, Eugene ; Pak Kin Wong ; Shimizu, T.

  • Author_Institution
    SAE Technol. Centre, SAE Magnetics (H.K.) Ltd., Shatin, China
  • fYear
    2006
  • fDate
    10-15 Sept. 2006
  • Firstpage
    116
  • Lastpage
    119
  • Abstract
    The effect of electrostatic discharge (ESD) on the tunnneling magnetoresistive (TMR) sensor is studied. It is shown that failure symptom of the ESD damaged alumina oxide based TMR sensor is much different from giant MR sensor.
  • Keywords
    electrostatic discharge; magnetic sensors; magnetoresistive devices; tunnelling magnetoresistance; electrostatic discharge; tunneling magnetoresistive sensor; Electrostatic discharge; Giant magnetoresistance; Magnetic sensors; Rough surfaces; Surface charging; Surface resistance; Surface roughness; Testing; Tunneling magnetoresistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-5853-7115-0
  • Type

    conf

  • Filename
    5256792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=502606