DocumentCode :
502606
Title :
Effect of electrostatic discharge on tunneling magnetoresistive sensor
Author :
Lai, A. ; Leung, Eugene ; Pak Kin Wong ; Shimizu, T.
Author_Institution :
SAE Technol. Centre, SAE Magnetics (H.K.) Ltd., Shatin, China
fYear :
2006
fDate :
10-15 Sept. 2006
Firstpage :
116
Lastpage :
119
Abstract :
The effect of electrostatic discharge (ESD) on the tunnneling magnetoresistive (TMR) sensor is studied. It is shown that failure symptom of the ESD damaged alumina oxide based TMR sensor is much different from giant MR sensor.
Keywords :
electrostatic discharge; magnetic sensors; magnetoresistive devices; tunnelling magnetoresistance; electrostatic discharge; tunneling magnetoresistive sensor; Electrostatic discharge; Giant magnetoresistance; Magnetic sensors; Rough surfaces; Surface charging; Surface resistance; Surface roughness; Testing; Tunneling magnetoresistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-5853-7115-0
Type :
conf
Filename :
5256792
Link To Document :
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