DocumentCode :
502610
Title :
ESD induced instability of Pinned layer in GMR head
Author :
Ohtsu, T. ; Kataoka, K. ; Koyama, N. ; Sam Luo
Author_Institution :
Hitachi Global Storage TechnoIogies Japan, Ltd., Odawara, Japan
fYear :
2006
fDate :
10-15 Sept. 2006
Firstpage :
100
Lastpage :
103
Abstract :
ESD robustness of pinned layer was studied for GMR heads. We investigated the types of high field transfer curve of GMR heads with damaged pinned layer by using high field QST. It was found that the degradation of pinned layer was caused by nano pulse ESD and the phenomena was detected by high field QST.
Keywords :
electrostatic discharge; giant magnetoresistance; ESD-induced instability; GMR head; electrostatic discharge; pinned layer; quasistatic tester; Degradation; Electrical resistance measurement; Electrostatic discharge; Magnetic domains; Magnetic field measurement; Magnetic fields; Magnetic heads; Resistance heating; Robustness; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-5853-7115-0
Type :
conf
Filename :
5256796
Link To Document :
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