• DocumentCode
    502610
  • Title

    ESD induced instability of Pinned layer in GMR head

  • Author

    Ohtsu, T. ; Kataoka, K. ; Koyama, N. ; Sam Luo

  • Author_Institution
    Hitachi Global Storage TechnoIogies Japan, Ltd., Odawara, Japan
  • fYear
    2006
  • fDate
    10-15 Sept. 2006
  • Firstpage
    100
  • Lastpage
    103
  • Abstract
    ESD robustness of pinned layer was studied for GMR heads. We investigated the types of high field transfer curve of GMR heads with damaged pinned layer by using high field QST. It was found that the degradation of pinned layer was caused by nano pulse ESD and the phenomena was detected by high field QST.
  • Keywords
    electrostatic discharge; giant magnetoresistance; ESD-induced instability; GMR head; electrostatic discharge; pinned layer; quasistatic tester; Degradation; Electrical resistance measurement; Electrostatic discharge; Magnetic domains; Magnetic field measurement; Magnetic fields; Magnetic heads; Resistance heating; Robustness; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-5853-7115-0
  • Type

    conf

  • Filename
    5256796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=502610