DocumentCode
502615
Title
Characterization and modeling of three CMOS diode structures in the CDM to HBM timeframe
Author
Stockinger, M. ; Miller, J.W.
Author_Institution
Freescale Semicond. Inc., Austin, TX, USA
fYear
2006
fDate
10-15 Sept. 2006
Firstpage
46
Lastpage
53
Abstract
We present advanced TLP measurement techniques down to 1.2ns pulses. We compare gated, STI and abutted tie diodes and introduce a compact model with a new thermal equivalent circuit fitting data in the entire CDM to HBM timeframe. Further, we compare diode area efficiency in a full ESD protection network.
Keywords
CMOS integrated circuits; electrostatic discharge; equivalent circuits; semiconductor diodes; CMOS diode structures; ESD protection network; HBM timeframe; abutted tie diodes; thermal equivalent circuit fitting; CMOS technology; Electrical resistance measurement; Electrostatic discharge; Equivalent circuits; Measurement techniques; Network-on-a-chip; Protection; Pulse measurements; Semiconductor device modeling; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
Conference_Location
Anaheim, CA
Print_ISBN
978-1-5853-7115-0
Type
conf
Filename
5256802
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