Title :
Characterization and modeling of three CMOS diode structures in the CDM to HBM timeframe
Author :
Stockinger, M. ; Miller, J.W.
Author_Institution :
Freescale Semicond. Inc., Austin, TX, USA
Abstract :
We present advanced TLP measurement techniques down to 1.2ns pulses. We compare gated, STI and abutted tie diodes and introduce a compact model with a new thermal equivalent circuit fitting data in the entire CDM to HBM timeframe. Further, we compare diode area efficiency in a full ESD protection network.
Keywords :
CMOS integrated circuits; electrostatic discharge; equivalent circuits; semiconductor diodes; CMOS diode structures; ESD protection network; HBM timeframe; abutted tie diodes; thermal equivalent circuit fitting; CMOS technology; Electrical resistance measurement; Electrostatic discharge; Equivalent circuits; Measurement techniques; Network-on-a-chip; Protection; Pulse measurements; Semiconductor device modeling; Semiconductor diodes;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-5853-7115-0
