• DocumentCode
    502651
  • Title

    Copper interconnect microanalysis and electromigration reliability performance due to the impact of TLP ESD

  • Author

    Sherry, Suat Cheng Khoo ; Tan, P.-Y. ; Chua, E-C ; Carol, S-C Tan ; Manna, I. ; Redkar, S. ; Ansari, S.

  • Author_Institution
    Chartered Semiconductor Mfg. Ltd., 60 Woodlands Industrial Park D St2, Singapore 738406
  • fYear
    2002
  • fDate
    6-10 Oct. 2002
  • Firstpage
    385
  • Lastpage
    389
  • Abstract
    Electrostatic discharge events can degrade the electromigration (EM) reliability of devices. Transmission Line Pulsing (TLP) is used to simulate such an occurrence on copper interconnects and a study made on the impact of this on EM performance. Compelling evidence from TEM data suggests the change in the microstructure of the interconnects explains the creation of latent EM failures.
  • Keywords
    Copper; Electromigration; Electrostatic discharge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
  • Conference_Location
    Charlotte, NC, USA
  • Print_ISBN
    978-1-5853-7040-5
  • Electronic_ISBN
    978-1-5853-7040-5
  • Type

    conf

  • Filename
    5266999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=502651