Title :
Copper interconnect microanalysis and electromigration reliability performance due to the impact of TLP ESD
Author :
Sherry, Suat Cheng Khoo ; Tan, P.-Y. ; Chua, E-C ; Carol, S-C Tan ; Manna, I. ; Redkar, S. ; Ansari, S.
Author_Institution :
Chartered Semiconductor Mfg. Ltd., 60 Woodlands Industrial Park D St2, Singapore 738406
Abstract :
Electrostatic discharge events can degrade the electromigration (EM) reliability of devices. Transmission Line Pulsing (TLP) is used to simulate such an occurrence on copper interconnects and a study made on the impact of this on EM performance. Compelling evidence from TEM data suggests the change in the microstructure of the interconnects explains the creation of latent EM failures.
Keywords :
Copper; Electromigration; Electrostatic discharge;
Conference_Titel :
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location :
Charlotte, NC, USA
Print_ISBN :
978-1-5853-7040-5
Electronic_ISBN :
978-1-5853-7040-5
