DocumentCode
502655
Title
Study for recovery process of damaged Al2 O3 during ion milling to increase tolerance to ESD
Author
Kakuta, Shigeru ; Odai, Shiroyasu ; Furusawa, Kenji
Author_Institution
Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-cho, Totsuka-kum Yokohama, 244-0817, Japan
fYear
2002
fDate
6-10 Oct. 2002
Firstpage
345
Lastpage
350
Abstract
Increasing the areal density of magnetic recording requires a thinner gap insulator between the magnetic shields and the giant magnetoresistive (GMR) sensor. Conducting tip atomic force microscopy and a defect imaging technique using electrodeposition were used to evaluate the electrical insulating characteristics of Al2 O3 film in GMR heads. In this paper, the damage to the insulating film caused by ion milling and a defect recovery process are discussed.
Keywords
Atomic force microscopy; Conductive films; Dielectrics and electrical insulation; Force sensors; Giant magnetoresistance; Magnetic films; Magnetic recording; Magnetic sensors; Magnetic shielding; Sensor phenomena and characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location
Charlotte, NC, USA
Print_ISBN
978-1-5853-7040-5
Electronic_ISBN
978-1-5853-7040-5
Type
conf
Filename
5267003
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