• DocumentCode
    502655
  • Title

    Study for recovery process of damaged Al2O3 during ion milling to increase tolerance to ESD

  • Author

    Kakuta, Shigeru ; Odai, Shiroyasu ; Furusawa, Kenji

  • Author_Institution
    Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-cho, Totsuka-kum Yokohama, 244-0817, Japan
  • fYear
    2002
  • fDate
    6-10 Oct. 2002
  • Firstpage
    345
  • Lastpage
    350
  • Abstract
    Increasing the areal density of magnetic recording requires a thinner gap insulator between the magnetic shields and the giant magnetoresistive (GMR) sensor. Conducting tip atomic force microscopy and a defect imaging technique using electrodeposition were used to evaluate the electrical insulating characteristics of Al2O3 film in GMR heads. In this paper, the damage to the insulating film caused by ion milling and a defect recovery process are discussed.
  • Keywords
    Atomic force microscopy; Conductive films; Dielectrics and electrical insulation; Force sensors; Giant magnetoresistance; Magnetic films; Magnetic recording; Magnetic sensors; Magnetic shielding; Sensor phenomena and characterization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
  • Conference_Location
    Charlotte, NC, USA
  • Print_ISBN
    978-1-5853-7040-5
  • Electronic_ISBN
    978-1-5853-7040-5
  • Type

    conf

  • Filename
    5267003