DocumentCode :
502655
Title :
Study for recovery process of damaged Al2O3 during ion milling to increase tolerance to ESD
Author :
Kakuta, Shigeru ; Odai, Shiroyasu ; Furusawa, Kenji
Author_Institution :
Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-cho, Totsuka-kum Yokohama, 244-0817, Japan
fYear :
2002
fDate :
6-10 Oct. 2002
Firstpage :
345
Lastpage :
350
Abstract :
Increasing the areal density of magnetic recording requires a thinner gap insulator between the magnetic shields and the giant magnetoresistive (GMR) sensor. Conducting tip atomic force microscopy and a defect imaging technique using electrodeposition were used to evaluate the electrical insulating characteristics of Al2O3 film in GMR heads. In this paper, the damage to the insulating film caused by ion milling and a defect recovery process are discussed.
Keywords :
Atomic force microscopy; Conductive films; Dielectrics and electrical insulation; Force sensors; Giant magnetoresistance; Magnetic films; Magnetic recording; Magnetic sensors; Magnetic shielding; Sensor phenomena and characterization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location :
Charlotte, NC, USA
Print_ISBN :
978-1-5853-7040-5
Electronic_ISBN :
978-1-5853-7040-5
Type :
conf
Filename :
5267003
Link To Document :
بازگشت