DocumentCode
502680
Title
Effects of ESD transients on the properties of GMR heads
Author
Granstrom, Eric ; Cho, Haeseok ; Stokes, Scott ; Srun, Seakly ; Tabat, Ned
Author_Institution
Seagate Technology, 7801 Computer Ave. S, MS NRW102, Bloomington, MN, 55435 USA
fYear
2002
fDate
6-10 Oct. 2002
Firstpage
123
Lastpage
129
Abstract
Simulated ESD transients with pulsewidths from 0.1 nsec to 10 nsec were applied to GMR heads. From 1 to 10 nsec essentially no changes in failure voltages are observed, but below approximately 1 nsec, failure voltages increase. The time marking a transition between the two regimes, ∼1 nsec, and the dependence of failure voltage on either side are qualitatively consistent with the expected transition from adiabatic failure for short pulses to a more steady-state thermal failure for longer pulses, but true adiabatic behavior is not clear for short pulses. The ratio in voltages inducing resistance versus amplitude failure remains constant over all pulsewidths and for both voltage polarities, suggesting thermal degradation is dominant. Although magnetic failures occur at lower voltages than resistive, no observations here suggest that either the magnitude or direction of the pulse-induced magnetic field is a critical parameter in head failure.
Keywords
Electrostatic discharge;
fLanguage
English
Publisher
ieee
Conference_Titel
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location
Charlotte, NC, USA
Print_ISBN
978-1-5853-7040-5
Electronic_ISBN
978-1-5853-7040-5
Type
conf
Filename
5267030
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