DocumentCode :
502695
Title :
A 6mW, 1.5dB NF CMOS LNA for GPS with 3kV HBM ESD-protection
Author :
Leroux, Paul ; Vassilev, Vesselin ; Steyaert, Michiel ; Maes, Herman
Author_Institution :
K.U. Leuven, Department of Electrical Engineering, ESAT-MICAS, Kasteelpark Arenberg 10, 3001 Heverlee, Belgium
fYear :
2002
fDate :
6-10 Oct. 2002
Firstpage :
18
Lastpage :
25
Abstract :
This paper describes the design of a high performance 0.25µm CMOS Low Noise Amplifier (LNA) for the Global Positioning System (GPS) operating at 1.57GHz. The LNA features a 1.5dB noise figure. The input ESD-protection is in the order of 3kV HBM and the power consumption is only 6mW.
Keywords :
Band pass filters; CMOS technology; Circuits; Electrostatic discharge; Global Positioning System; Impedance matching; Noise figure; Noise measurement; Parasitic capacitance; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location :
Charlotte, NC, USA
Print_ISBN :
978-1-5853-7040-5
Electronic_ISBN :
978-1-5853-7040-5
Type :
conf
Filename :
5267045
Link To Document :
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