DocumentCode :
502979
Title :
Amplitude and asymmetry study using magnetoresistive sensitivity mapping (MSM) on manufacturing ESD failures and ESD simulation experiments
Author :
Lam, Michelle ; Iben, Icko Eric Timothy
Author_Institution :
IBM Corp., San Jose, CA, USA
fYear :
2005
fDate :
8-16 Sept. 2005
Firstpage :
1
Lastpage :
7
Abstract :
Magnetoresistive Sensitivity Mapping (MSM) is used to investigate hard and soft electrostatic discharge (ESD) damage on anisotropic magnetoresistive (AMR) readers from manufacturing failures and simulation experiments. Unipolar MSM data is compared with sensor output voltage amplitudes which are measured using signals from magnetic transitions written on a high density magnetic tape. A bipolar MSM technique using two oppositely magnetized tips to measure the AMR sensitivity was applied to reveal sensor asymmetry. Multiple domains are observed on sensors exposed to soft ESD. Re-magnetization of the soft ESD damaged head showed the soft ESD damage is irreversible.
Keywords :
electrostatic discharge; enhanced magnetoresistance; magnetic heads; magnetic sensors; magnetic tapes; magnetic transitions; magnetisation; magnetoresistive devices; ESD failure; ESD simulation; anisotropic magnetoresistive reader; bipolar MSM technique; electrostatic discharge; high density magnetic tape; magnetic transitions; magnetoresistive sensitivity mapping; magnetoresistive sensor; re-magnetization; soft ESD damaged head; Anisotropic magnetoresistance; Density measurement; Electrostatic discharge; Electrostatic measurements; Magnetic anisotropy; Magnetic domains; Magnetic sensors; Perpendicular magnetic anisotropy; Virtual manufacturing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-58537-069-6
Electronic_ISBN :
978-1-58537-069-6
Type :
conf
Filename :
5271722
Link To Document :
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