• DocumentCode
    502985
  • Title

    SCR based ESD protection in nanometer SOI technologies

  • Author

    Marichal, Olivier ; Wybo, Geert ; Van Camp, Benjamin ; Vanysacker, Pieter ; Keppens, Bart

  • Author_Institution
    Sarnoff Eur., Gistel, Belgium
  • fYear
    2005
  • fDate
    8-16 Sept. 2005
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    This paper introduces an SCR based ESD protection design for SOI technologies. It is explained how efficient SCR devices can be constructed in SOI. These devices outperform MOS devices by about 4 times. Experimental data from 65 nm and 130 nm SOI is presented to support this.
  • Keywords
    electrostatic devices; electrostatic discharge; nanoelectronics; silicon-on-insulator; thyristors; ESD device; SCR-based ESD protection design; Si-SiO2; nanometer SOI technology; size 130 nm; size 65 nm; Electrostatic discharge; Protection; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    978-1-58537-069-6
  • Electronic_ISBN
    978-1-58537-069-6
  • Type

    conf

  • Filename
    5271740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=502985