DocumentCode
503014
Title
Dependences of damping frequency and damping factor of bi-polar trigger waveforms on transient-induced latchup
Author
Hsu, Sheng-Fu ; Ker, Ming-Dou
Author_Institution
Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear
2005
fDate
8-16 Sept. 2005
Firstpage
1
Lastpage
8
Abstract
The dependences of damping frequency and damping factor of bi-polar trigger waveforms on transient-induced latchup (TLU) were characterized by device simulation and verified by experimental measurement. From the simulation results, the bi-polar trigger waveform with damping frequency of several tens of megahertz can trigger on TLU most easily. But, TLU is less sensitive to bi-polar trigger waveforms with an excessively large damping factor, an excessively high damping frequency, or an excessively low damping frequency. The simulation results have been experimentally verified with the silicon controlled rectifier (SCR) test structures fabricated in a 0.25-mum CMOS technology.
Keywords
CMOS integrated circuits; integrated circuit testing; CMOS technology; bi-polar trigger waveforms; damping factor; damping frequency; device simulation; silicon controlled rectifier; size 0.25 mum; transient-induced latchup; Anodes; CMOS technology; Damping; Electrical resistance measurement; Electrostatic discharge; Frequency; Immunity testing; System testing; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location
Tucson, AZ
Print_ISBN
978-1-58537-069-6
Electronic_ISBN
978-1-58537-069-6
Type
conf
Filename
5271811
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