DocumentCode
503026
Title
Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs
Author
Hyvonen, Sami ; Rosenbaum, Elyse
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear
2005
fDate
8-16 Sept. 2005
Firstpage
1
Lastpage
9
Abstract
CMOS diodes are evaluated in terms of figure-of-merit (It2/C) and quality factor. Five 5.25-GHz LNAs with ESD protection are designed and tested; all have high ESD protection levels. The LNA protected with a one-diode variant of the cancellation circuit has RF performance almost identical to that of a sixth, unprotected LNA.
Keywords
CMOS integrated circuits; Q-factor; electrostatic discharge; low noise amplifiers; microwave amplifiers; microwave diodes; microwave integrated circuits; CMOS LNA; CMOS diode; RF performance; diode-based tuned ESD protection; electrostatic discharge design; frequency 5.25 GHz; low noise amplifiers; quality factor; CMOS process; Capacitance measurement; Circuits; Diodes; Electrostatic discharge; Impedance measurement; Parasitic capacitance; Protection; Q factor; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location
Tucson, AZ
Print_ISBN
978-1-58537-069-6
Electronic_ISBN
978-1-58537-069-6
Type
conf
Filename
5271825
Link To Document