Title :
Selecting an appropriate esd protection for discrete RF power LDMOSTs
Author :
Smedes, T. ; de Boet, J. ; Rödle, T.
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
Abstract :
For ESD protections of RF Power MOSTs, Vt1 lowering by the RF signal, -due to the dV/dt effect-, can seriously degrade the RF performance. The use of a cascoded protection solves this problem. A new failure mechanism, related to the discharge of on-chip RF matching capacitors is presented. Adding a current limiting resistor in the protection solves this issue. Combining these solutions yields an appropriate protection for discrete RF power LDMOSTs.
Keywords :
UHF field effect transistors; electrostatic discharge; power MOSFET; ESD protection; current limiting resistor; discrete RF power LDMOST; dv-dt effect; frequency 800 MHz to 2200 MHz; laterally diffused metal-oxide-semiconductor transistor; on-chip RF matching capacitors; Appropriate technology; Capacitors; Electrostatic discharge; Failure analysis; Inductors; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers; Robustness;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-58537-069-6
Electronic_ISBN :
978-1-58537-069-6
