DocumentCode
503054
Title
STMSCR: A new multi-finger SCR-based protection structure against ESD
Author
Caillard, B. ; Azaïs, F. ; Dournelle, S. ; Salomé, P. ; Nouet, P.
Author_Institution
LIRMM, Univ. Montpellier, Montpellier, France
fYear
2003
fDate
21-25 Sept. 2003
Firstpage
1
Lastpage
9
Abstract
This paper introduces a new SCR-based structure for ESD protection. The STMSCR relies on the bimodal operation of a LSCR with minimum design rule dimensions: an external triggering circuitry permits switching from a transparency mode to a protection mode as soon as an ESD event is detected. The trigger voltage can then be adjusted by design without any impact on the ESD performances. The STMSCR is multifinger compliant, thus allowing area-efficient design of pad-located ESD protection. The STMSCR is demonstrated in a 0.18 mum-CMOS technology without any process customization, an HBM failure threshold over 115 V/mum is reached while always ensuring current uniformity in multi-finger structures.
Keywords
CMOS integrated circuits; electrostatic discharge; thyristors; trigger circuits; CMOS technology; HBM threshold; STMSCR; bimodal operation; multifinger SCR-based protection structure; pad-located ESD protection; size 0.18 mum; triggering circuit; Anodes; CMOS technology; Cathodes; Circuits; Electrostatic discharge; Event detection; Protection; Switches; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
Conference_Location
Las Vegas, NV
Print_ISBN
978-1-5853-7057-3
Electronic_ISBN
978-1-5853-7057-3
Type
conf
Filename
5272017
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