• DocumentCode
    503054
  • Title

    STMSCR: A new multi-finger SCR-based protection structure against ESD

  • Author

    Caillard, B. ; Azaïs, F. ; Dournelle, S. ; Salomé, P. ; Nouet, P.

  • Author_Institution
    LIRMM, Univ. Montpellier, Montpellier, France
  • fYear
    2003
  • fDate
    21-25 Sept. 2003
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    This paper introduces a new SCR-based structure for ESD protection. The STMSCR relies on the bimodal operation of a LSCR with minimum design rule dimensions: an external triggering circuitry permits switching from a transparency mode to a protection mode as soon as an ESD event is detected. The trigger voltage can then be adjusted by design without any impact on the ESD performances. The STMSCR is multifinger compliant, thus allowing area-efficient design of pad-located ESD protection. The STMSCR is demonstrated in a 0.18 mum-CMOS technology without any process customization, an HBM failure threshold over 115 V/mum is reached while always ensuring current uniformity in multi-finger structures.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; thyristors; trigger circuits; CMOS technology; HBM threshold; STMSCR; bimodal operation; multifinger SCR-based protection structure; pad-located ESD protection; size 0.18 mum; triggering circuit; Anodes; CMOS technology; Cathodes; Circuits; Electrostatic discharge; Event detection; Protection; Switches; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    978-1-5853-7057-3
  • Electronic_ISBN
    978-1-5853-7057-3
  • Type

    conf

  • Filename
    5272017