DocumentCode :
503054
Title :
STMSCR: A new multi-finger SCR-based protection structure against ESD
Author :
Caillard, B. ; Azaïs, F. ; Dournelle, S. ; Salomé, P. ; Nouet, P.
Author_Institution :
LIRMM, Univ. Montpellier, Montpellier, France
fYear :
2003
fDate :
21-25 Sept. 2003
Firstpage :
1
Lastpage :
9
Abstract :
This paper introduces a new SCR-based structure for ESD protection. The STMSCR relies on the bimodal operation of a LSCR with minimum design rule dimensions: an external triggering circuitry permits switching from a transparency mode to a protection mode as soon as an ESD event is detected. The trigger voltage can then be adjusted by design without any impact on the ESD performances. The STMSCR is multifinger compliant, thus allowing area-efficient design of pad-located ESD protection. The STMSCR is demonstrated in a 0.18 mum-CMOS technology without any process customization, an HBM failure threshold over 115 V/mum is reached while always ensuring current uniformity in multi-finger structures.
Keywords :
CMOS integrated circuits; electrostatic discharge; thyristors; trigger circuits; CMOS technology; HBM threshold; STMSCR; bimodal operation; multifinger SCR-based protection structure; pad-located ESD protection; size 0.18 mum; triggering circuit; Anodes; CMOS technology; Cathodes; Circuits; Electrostatic discharge; Event detection; Protection; Switches; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-5853-7057-3
Electronic_ISBN :
978-1-5853-7057-3
Type :
conf
Filename :
5272017
Link To Document :
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