A study of vertical SiGe thyristor design and optimization

Author

Joshi, Sopan ; Ida, Richard ; Rosenbaum, Elyse

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

fYear

2003

fDate

21-25 Sept. 2003

Firstpage

1

Lastpage

9

Abstract

We present extensive measurement results investigating the design and optimization of vertical SiGe thyristors for use as ESD protection elements in RF integrated circuits. Experiments include variations of the anode material, contact geometry, and buried layer, as well as a detailed study of optimal area scaling. RF characterization using s-parameter data is presented.

Keywords

S-parameters; anodes; buried layers; electrostatic discharge; optimisation; radiofrequency integrated circuits; silicon compounds; thyristors; ESD protection element; RF characterization; RF integrated circuit; SiGe; anode material; buried layer; contact geometry; optimization; s-parameter data; semiconductor controlled rectifier; vertical thyristor design; Anodes; Design optimization; Electrostatic discharge; Germanium silicon alloys; Integrated circuit measurements; Protection; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.

Conference_Location

Las Vegas, NV

Print_ISBN

978-1-5853-7057-3

Electronic_ISBN

978-1-5853-7057-3

Type

conf

Filename

5272020