Fabrication & characterization of S-band power amplifier using GaAs die

Author

Bhatti, Nadeem Shahzad ; Imran, Muhammad

Author_Institution

Nat. Eng. & Sci. Comm., Islamabad, Pakistan

fYear

2009

fDate

15-18 June 2009

Firstpage

1

Lastpage

4

Abstract

This paper presents the fabrication and characterization of S-band power amplifier MMIC (GaAs die) implemented in hybrid fixture, which is compatible with different microwave applications. The configuration used for device fabrication is relatively simple, low cost and easy to assemble with manual die & wedge bonder. It can be used in any microwave assembly as driver/power amplifier. Due to use of substrate material RO4003C, epoxy, and solder preform (SPF) and molytab it is useful for prototype production. The MMIC has gain as high as 21.37 dB at S-band. A number of Key methods are discussed for MMIC performance improvement.

Keywords

III-V semiconductors; MMIC power amplifiers; driver circuits; gallium arsenide; soldering; MMIC performance; S-band power amplifier fabrication; driver amplifier; gain 21.37 dB; microwave applications; prototype production; solder preform; wedge bonder; Assembly; Bonding; Costs; Fabrication; Fixtures; Gallium arsenide; MMICs; Microwave amplifiers; Microwave devices; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Packaging Conference, 2009. EMPC 2009. European

Conference_Location

Rimini

Print_ISBN

978-1-4244-4722-0

Electronic_ISBN

978-0-6152-9868-9

Type

conf

Filename

5272874