Title :
Mixed-Mode simulation of single event upsets in modern SiGe BiCMOS mixed-signal circuits
Author :
Turowski, Marek ; Raman, Ashok ; Fedoseyev, Alex
Author_Institution :
CFD Res. Corp. (CFDRC), Huntsville, AL, USA
Abstract :
The latest enhancements to CFDRC NanoTCAD mixed-mode simulator, combining 3D physics-based device models and advanced circuit compact models (VBIC, Mextram) for advanced bipolar devices, as well as unique mixed-mode coupling of 3D TCAD models with the Cadence Spectre circuit simulator, have enabled simulations and in-operation analysis of ionizing radiation single event effects (SEEs) in modern high-speed SiGe BiCMOS technologies and integrated circuits. An example of simulation of SEEs affecting digital output of a 7.2 GHz mixed-signal circuit are presented. Our mixed-mode modeling results compare very well with experimental data.
Keywords :
BiCMOS analogue integrated circuits; BiCMOS digital integrated circuits; Ge-Si alloys; mixed analogue-digital integrated circuits; semiconductor materials; technology CAD (electronics); 3D TCAD models; 3D physics-based device models; BiCMOS mixed-signal circuits; CFDRC NanoTCAD mixed-mode simulator; Cadence Spectre circuit simulator; Mextram models; SiGe; VBIC models; advanced circuit compact models; bipolar devices; frequency 7.2 GHz; ionizing radiation single event effects; mixed-mode simulation; single event upsets; Analytical models; BiCMOS integrated circuits; Circuit simulation; Coupling circuits; Discrete event simulation; Germanium silicon alloys; Integrated circuit modeling; Nanoscale devices; Silicon germanium; Single event upset; 3D; HBT; Mextram; NanoTCAD; Spectre; TCAD; VBIC; device simulation; mixed-mode; physics-based modeling; single event effects;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference
Conference_Location :
Lodz
Print_ISBN :
978-1-4244-4798-5
Electronic_ISBN :
978-83-928756-1-1
