FinFET compact modeling and parameter extraction

In this paper, we present a FinFET compact model and its associated parameter extraction methodology. This explicit model accounts for all major small geometry effects and allows accurate simulations of both n- and p-type FinFETs. The model core is physics-based (long-channel model) and some semiempirical corrections are introduced in order to accurately simulate the behavior of ultrashort (L = 25 nm) and ultrathin (W_Si = 3 nm) FinFETs. The parameter extraction relies on a software suite allowing an automatic parameter extraction. In this work, the development of our parameter extraction procedure is based on 3-D simulation results. The optimization of parameters related to quantum effects, short-channel effects and channel length modulation illustrates the methodology of parameter extraction. Finally, we compare the FinFET characteristics (drain current and small signal parameters) obtained by our explicit compact model with 3-D numerical simulations for different Fin widths and channel lengths.