Thermal Assisted Switching Magnetic Tunnel Junctions as FPGA memory elements

Author

Silva, Victor ; Fernandes, Jorge R. ; Oliveira, Luis B. ; Neto, Hugo C. ; Ferreira, Ricardo ; Freitas, Susana ; Freitas, Paulo P.

Author_Institution

INESC-ID, Lisbon, Portugal

fYear

2009

fDate

25-27 June 2009

Firstpage

332

Lastpage

336

Abstract

This paper reports the on-going progress in developing a Thermal Assisted Switching Magnetic RAM (TAS-MRAM) based memory element as an alternative to both SRAM based memory elements and flash based memory elements in the context of Field Programmable Gate Arrays (FPGA).

Keywords

MRAM devices; field programmable gate arrays; magnetic tunnelling; FPGA memory elements; SRAM based memory elements; TAS-MRAM based memory element; field programmable gate arrays; flash based memory elements; thermal assisted switching magnetic RAM; thermal assisted switching magnetic tunnel junction; Antiferromagnetic materials; Field programmable gate arrays; Logic; Magnetic separation; Magnetic switching; Magnetic tunneling; Random access memory; Read-write memory; Temperature; Writing; FPGA; Magnetic Tunnel Junctions; Thermal Assisted Switching Magnetic RAM; Thermally Assisted Switching; Unbalanced Flip Flop; memory element;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference

Conference_Location

Lodz

Print_ISBN

978-1-4244-4798-5

Electronic_ISBN

978-83-928756-1-1

Type

conf

Filename

5289658