Title :
Thermal Assisted Switching Magnetic Tunnel Junctions as FPGA memory elements
Author :
Silva, Victor ; Fernandes, Jorge R. ; Oliveira, Luis B. ; Neto, Hugo C. ; Ferreira, Ricardo ; Freitas, Susana ; Freitas, Paulo P.
Author_Institution :
INESC-ID, Lisbon, Portugal
Abstract :
This paper reports the on-going progress in developing a Thermal Assisted Switching Magnetic RAM (TAS-MRAM) based memory element as an alternative to both SRAM based memory elements and flash based memory elements in the context of Field Programmable Gate Arrays (FPGA).
Keywords :
MRAM devices; field programmable gate arrays; magnetic tunnelling; FPGA memory elements; SRAM based memory elements; TAS-MRAM based memory element; field programmable gate arrays; flash based memory elements; thermal assisted switching magnetic RAM; thermal assisted switching magnetic tunnel junction; Antiferromagnetic materials; Field programmable gate arrays; Logic; Magnetic separation; Magnetic switching; Magnetic tunneling; Random access memory; Read-write memory; Temperature; Writing; FPGA; Magnetic Tunnel Junctions; Thermal Assisted Switching Magnetic RAM; Thermally Assisted Switching; Unbalanced Flip Flop; memory element;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference
Conference_Location :
Lodz
Print_ISBN :
978-1-4244-4798-5
Electronic_ISBN :
978-83-928756-1-1
