DocumentCode
5033
Title
Total Ionizing Dose Characterization of a Prototype Floating Gate MOSFET Dosimeter for Space Applications
Author
Alvarez, M. ; Hernando, C. ; Cesari, J. ; Pineda, A. ; Garcia-Moreno, E.
Author_Institution
Nat. Inst. for Aerosp. Technol. (INTA), Torrejon de Ardoz, Spain
Volume
60
Issue
6
fYear
2013
fDate
Dec. 2013
Firstpage
4281
Lastpage
4288
Abstract
A new dosimeter for total ionizing dose that is based on a floating gate MOSFET is presented. The chip incorporates a reference standard MOSFET for temperature compensation and front-end electronics to provide manageable output signals. The floating gate is automatically recharged through an included charge pump circuitry, thus its operating range is spread without affecting the sensitivity. Two different sensitivity configurations are included in the same chip, so the dosimeter can be used under different radiation environments. An initial characterization has been carried out in order to evaluate its suitability for space missions. The results show that the proposed floating gate radiation dosimeter is adequate for space missions with levels of total ionizing dose up to at least 10 krad(Si).
Keywords
MOSFET; dosimeters; radiation hardening (electronics); space vehicle electronics; charge pump circuitry; floating gate radiation dosimeter; front-end electronics; prototype floating gate MOSFET dosimeter; radiation environments; sensitivity configurations; space applications; space missions; temperature compensation; total ionizing dose characterization; Dosimetry; EPROM; Gamma-rays; MOSFET; Nonvolatile memory; Sensitivity; Dosimeter; MOSFET; floating gate; gamma rays; space radiation; total ionizing dose;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2013.2288573
Filename
6678065
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