Comparison of gm-boosted oscillators in silicon field effect transistor and silicon-germanium hetero-junction bipolar transistor technology

Author

Ussmueller, Thomas ; Seemann, Kay ; Weigel, Robert

Author_Institution

Inst. for Electron. Eng., Friedrich-Alexander Univ. of Erlangen-Nuremberg, Erlangen, Germany

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

258

Lastpage

261

Abstract

This paper presents two g_m-boosted VCOs. One VCO is built with Si MOS field effect transistors. The second one is built with SiGe bipolar transistors. Both VCOs are designed to cover a large tuning range from 5.2 GHz to 5.9 GHz and to minimize the power dissipation. Measured results for both oscillators are shown. Finally the performance of both oscillators is compared and analyzed.

Keywords

CMOS analogue integrated circuits; Ge-Si alloys; field effect transistors; heterojunction bipolar transistors; voltage-controlled oscillators; GeSi; frequency 5.2 GHz to 5.9 GHz; gm-boosted oscillators; heterojunction bipolar transistor technology; silicon field effect transistor; Bipolar transistors; CMOS analog integrated circuits; FETs; Field programmable gate arrays; Germanium silicon alloys; Microwave oscillators; Radiofrequency integrated circuits; Silicon germanium; Switches; Voltage-controlled oscillators; CMOS analog integrated circuits; Microwave FET oscillators; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Voltage controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Technology Conference, 2009. EuWIT 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4721-3

Type

conf

Filename

5291047