Title :
Radiation effects in bipolar transistors baised on silicon - germanium heterostructures
Author :
Gromov, D.V. ; Elesin, Vadim V. ; Chukov, George V. ; Repin, V.V.
Abstract :
Ionizing radiation effects upon the properties of bipolar transistors on silicon-germanium heterostructures are investigated.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; radiation hardening (electronics); Si-Ge; bipolar transistor; ionizing radiation effect; silicon-germanium heterostructure; Bipolar transistors; Germanium silicon alloys; Helium; IEEE catalog; Indium tin oxide; Microwave communication; Organizing; Radiation effects; Silicon germanium;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
