DocumentCode
503399
Title
Radiation effects in bipolar transistors baised on silicon - germanium heterostructures
Author
Gromov, D.V. ; Elesin, Vadim V. ; Chukov, George V. ; Repin, V.V.
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
726
Lastpage
727
Abstract
Ionizing radiation effects upon the properties of bipolar transistors on silicon-germanium heterostructures are investigated.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; radiation hardening (electronics); Si-Ge; bipolar transistor; ionizing radiation effect; silicon-germanium heterostructure; Bipolar transistors; Germanium silicon alloys; Helium; IEEE catalog; Indium tin oxide; Microwave communication; Organizing; Radiation effects; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-4796-1
Type
conf
Filename
5292902
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